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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1942 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For TV horizontal output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Collector-emitter voltage IN Emitter-base voltage Collector current ANG CH SEM E Open base Open collector TC=25ae OND IC TOR UC VALUE 1500 800 6 3 50 150 -65~150 ae ae UNIT V V V A W Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC1942 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=600V; IE=0 10 |I A IEBO Emitter cut-off current VEB=5V; IC=0 10 |I A hFE DC current gain IC=1 A ; VCE=5V 8 40 HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1942 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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